发明名称 Method of manufacturing element substrate
摘要 Provided is a method of manufacturing an element substrate, including: forming first and second resists on a predetermined surface of a substrate so that part of the predetermined surface is exposed; etching the substrate with the first and second resists being used as a mask to form a first recess in the substrate; removing the second resist to expose a portion of the substrate that is different from the first recess; etching the substrate with the first resist being used as a mask to deepen the first recess and to form a second recess communicating with the first recess in the substrate; and covering openings of the first and second recesses with an orifice forming member to form a pressure chamber by the first recess and an orifice forming member and to form a flow reducing portion by the second recess and the orifice forming member.
申请公布号 US9616666(B2) 申请公布日期 2017.04.11
申请号 US201514820823 申请日期 2015.08.07
申请人 CANON KABUSHIKI KAISHA 发明人 Yoshioka Toshifumi;Nakakubo Toru;Watanabe Shinichiro
分类号 B41J2/16;B41J2/14 主分类号 B41J2/16
代理机构 Fitzpatrick, Cella, Harper & Scinto 代理人 Fitzpatrick, Cella, Harper & Scinto
主权项 1. A method of manufacturing an element substrate, the element substrate comprising: an orifice forming member having an orifice for ejecting liquid formed therein; anda flow path forming member for forming a pressure chamber for storing the liquid to be ejected through the orifice and for generating an ejection pressure, and forming a flow reducing portion communicating with the pressure chamber,the method comprising:forming a first resist and a second resist on a first surface of a substrate serving as the flow path forming member so that part of the first surface is exposed;etching the substrate from a side of the first surface toward a side of a second surface of the substrate, which is a surface opposite to the first surface, with the first resist and the second resist being used as a mask to form a first recess in the substrate;removing the second resist to expose a portion of the substrate that is different from the first recess;etching the substrate from the side of the first surface to the side of the second surface with the first resist being used as a mask to deepen the first recess and to form a second recess communicating with the first recess on the side of the second surface; andcovering openings of the first recess and the second recess with the orifice forming member to form the pressure chamber by the first recess and the orifice forming member and to form the flow reducing portion on the side of the second surface by the second recess and the orifice forming member.
地址 Tokyo JP