发明名称 |
Amplifier devices with in-package transmission line combiner |
摘要 |
The embodiments described herein include amplifiers that are typically used in radio frequency (RF) applications. The amplifiers described herein use a combiner that is implemented inside the device package. Specifically, the amplifiers can be implemented with a combiner that includes a transmission line inside the device package, where the transmission line has a length between first and second ends configured to provide an impedance inverter between the outputs (e.g., drain terminals) of transistors in the amplifier. |
申请公布号 |
US9621115(B1) |
申请公布日期 |
2017.04.11 |
申请号 |
US201514966922 |
申请日期 |
2015.12.11 |
申请人 |
NXP USA, INC. |
发明人 |
Wu Yu-Ting D. |
分类号 |
H03F1/07;H03F1/02;H03F1/56;H03F3/193;H03F3/21 |
主分类号 |
H03F1/07 |
代理机构 |
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代理人 |
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主权项 |
1. An amplifier comprising:
a device package including an output lead and at least one input lead, the device package encasing:
a first amplifier with a first transistor including a first transistor output;a second amplifier with a second transistor including a second transistor output; anda combiner coupled to the first transistor output and the second transistor output, the combiner including a transmission line having a length configured to provide at least a portion of an impedance inverter between the first transistor output and the second transistor output, wherein the impedance inverter is configured to compensate for a first transistor parasitic capacitance and a second transistor parasitic capacitance, and wherein the impedance inverter further includes a first set of bond wires and a second set of bond wires. |
地址 |
Austin TX US |