Silicon-on-nothing transistor semiconductor structure with channel epitaxial silicon-germanium region

摘要

An improved transistor with channel epitaxial silicon and methods for fabrication thereof. In one aspect, a method for fabricating a transistor includes: forming a gate stack structure on an epitaxial silicon region, a width dimension of the epitaxial silicon region approximating a width dimension of the gate stack structure; encapsulating the epitaxial silicon region under the gate stack structure with sacrificial spacers formed on both sides of the gate stack structure and the epitaxial silicon region; forming a channel of the transistor having a width dimension that approximates that of the epitaxial silicon region and the gate stack structure, the epitaxial silicon region and the gate stack structure formed on the channel of the transistor; removing the sacrificial spacers; and growing a raised epitaxial source and drain from the silicon substrate, with portions of the raised epitaxial source and drain in contact with the epitaxial silicon region.

主权项

1. A transistor comprising:
a silicon substrate having an upper surface; a trench structure in the substrate; a raised epitaxial source and drain extending above and in contact with the upper surface of the silicon substrate; an epitaxial silicon region positioned between and in contact with the raised epitaxial source and drain; and a gate stack structure in contact with the epitaxial silicon region and coupled to the raised epitaxial source and drain by the epitaxial silicon region.