发明名称 Semiconductor device and method of forming anisotropic conductive film between semiconductor die and build-up interconnect structure
摘要 A semiconductor wafer contains a plurality of semiconductor die with bumps formed over contact pads on an active surface of the semiconductor die. An ACF is deposited over the bumps and active surface of the wafer. An insulating layer can be formed between the ACF and semiconductor die. The semiconductor wafer is singulated to separate the die. The semiconductor die is mounted to a temporary carrier with the ACF oriented to the carrier. The semiconductor die is forced against the carrier to compress the ACF under the bumps and form a low resistance electrical interconnect to the bumps. An encapsulant is deposited over the semiconductor die and carrier. The carrier is removed. An interconnect structure is formed over the semiconductor die and encapsulant. The interconnect structure is electrically connected through the compressed ACF to the bumps. The ACF reduces shifting of the semiconductor die during encapsulation.
申请公布号 US9620455(B2) 申请公布日期 2017.04.11
申请号 US201012822458 申请日期 2010.06.24
申请人 STATS ChipPAC Pte. Ltd. 发明人 Pagaila Reza A.;Lin Yaojian;Koo Jun Mo
分类号 H01L21/00;H01L23/538;H01L21/56;H01L21/683;H01L23/13;H01L23/498;H01L25/065;H01L25/00;H01L23/31;H01L23/00 主分类号 H01L21/00
代理机构 Patent Law Group: Atkins and Associates, P.C. 代理人 Atkins Robert D.;Patent Law Group: Atkins and Associates, P.C.
主权项 1. A method of making a semiconductor device, comprising: providing a semiconductor wafer including a plurality of semiconductor die comprising bumps formed over contact pads on an active surface of the semiconductor die; depositing an anisotropic conductive film (ACF) over the bumps and active surface of the semiconductor wafer; singulating the semiconductor wafer to separate the semiconductor die; providing a temporary carrier; disposing the semiconductor die with the ACF oriented to the temporary carrier; compressing the ACF under the bumps to form a conductive portion of the ACF electrically connected to the bumps; curing the ACF to form a cured ACF; depositing an encapsulant over the semiconductor die and temporary carrier; removing the temporary carrier to expose the conductive portion of the cured ACF under the bumps; and forming an interconnect structure over the semiconductor die, cured ACF, and encapsulant with the interconnect structure being electrically connected through the conductive portion of the cured ACF to the bumps.
地址 Singapore SG