Solid state lighting devices with reduced crystal lattice dislocations and associated methods of manufacturing

摘要

Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“HSG”) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures.

主权项

1. A solid state lighting device, comprising:
a plurality of hemispherical grained silicon (HSG) structures positioned on a substrate surface; a single-crystal semiconductor material positioned on the substrate surface and the plurality of HSG structures; and an active region proximate the single-crystal semiconductor material, the active region including gallium nitride (GaN)/indium gallium nitride (InGaN) multiple quantum wells.