发明名称 |
Optoelectronic component and method of producing an optoelectronic component |
摘要 |
An optoelectronic device includes a carrier on which a semiconductor layer sequence is applied, said semiconductor layer sequence including an n-doped semiconductor layer and a p-doped semiconductor layer such that a p-n junction is formed which includes an active zone that generates electromagnetic radiation, wherein at least one of the n-doped semiconductor layer and the p-doped semiconductor layer includes a doped region having a first doping concentration greater than a second doping concentration in a surrounding area of the region in the semiconductor layer including the region. |
申请公布号 |
US9620673(B2) |
申请公布日期 |
2017.04.11 |
申请号 |
US201414782911 |
申请日期 |
2014.03.24 |
申请人 |
OSRAM Opto Semiconductors GmbH |
发明人 |
Meyer Tobias;Leirer Christian;Zini Lorenzo;Off Jürgen;Löffler Andreas;Bauer Adam |
分类号 |
H01L33/02;H01L33/00;H01L33/14;H01L27/15;H01L33/38 |
主分类号 |
H01L33/02 |
代理机构 |
DLA Piper LLP (US) |
代理人 |
DLA Piper LLP (US) |
主权项 |
1. An optoelectronic device comprising:
a earner on which a semiconductor layer sequence is applied, the semiconductor layer sequence comprising an n-doped semiconductor layer and a p-doped semiconductor layer such that a p-n junction is formed which comprises an active zone that generates electromagnetic radiation, wherein at least one of the n-doped semiconductor layer and the p-doped semiconductor layer comprises a doped region having a first doping concentration greater than a second doping concentration in a surrounding area of the region in the semiconductor layer comprising the region, either the region is formed to extend to and contact the p-n junction, or the region is formed to extend through the p-n junction and connect the two doped semiconductor layers. |
地址 |
DE |