Thin film transistor and manufacturing method thereof

摘要

The disclosure is related to a thin film transistor and a method of manufacturing the thin film transistor. The thin film transistor comprises a substrate, a gate, a gate insulation layer, a first semiconductor layer, an etch stop layer and a second semiconductor layer sequentially stacked on a surface of the substrate, and a source and a drain formed separating from each other and the source and the drain overlapping two ends of the second semiconductor layer respectively. A first via and a second via are formed on the etch stop layer corresponding to the source and the drain respectively. The source connects the first semiconductor layer through the first via; the drain connects the first semiconductor layer through the second via. The thin film transistor of the disclosure can effectively increase the on-state current of the thin film transistor and have a faster switching speed.

主权项

1. A thin film transistor, comprising:
a substrate; a gate, a gate insulation layer, a first semiconductor layer, an etch stop layer and a second semiconductor layer, which are sequentially stacked on a surface of the substrate; and a source and a drain formed separating from each other and the source and the drain overlapping two ends of the second semiconductor layer respectively; wherein a first via and a second via are formed on the etch stop layer corresponding to the source and the drain respectively; the source connects the first semiconductor layer through the first via; the drain connects the first semiconductor layer through the second via; and wherein the first semiconductor serves as a semiconductor layer and the gate of the second semiconductor layer at the same time, the source and the drain are connected to the first semiconductor and the second semiconductor for effectively increasing the on-state current of the thin film transistor and have a faster switching speed.