Information processing device and method for controlling replacement of semiconductor storage device

摘要

A processor or hard-wired logic circuit of an information processing device is configured to collect a life-expectancy index value of a first semiconductor storage device of primary semiconductor storage devices. The life-expectancy index value relates to a remaining number of times written data is able to be erased. The processor or hard-wired logic circuit is configured to collect read/write information regarding read/write access including read access of reading data from the first semiconductor storage device and write access of writing data to the first semiconductor storage device. The processor or hard-wired logic circuit is configured to determine, based on the collected read/write information, a criterion threshold used as a criterion for replacement of the first semiconductor storage device, and replace the first semiconductor storage device with a second semiconductor storage device of secondary semiconductor storage devices if the life-expectancy index value is less than the criterion threshold.

主权项

1. An information processing device comprising:
a plurality of semiconductor storage devices from and to which data is read and written; and a processor or hard-wired logic circuit configured to
collect a life-expectancy index value of a first semiconductor storage device of a plurality of semiconductor storage devices, the life-expectancy index value relating to a remaining number of times written data is able to be erased;collect read/write information for an application program which is assigned to use the first semiconductor storage device, the read/write information relating to read access of reading data from the first semiconductor storage device and write access of writing data to the first semiconductor storage device in connection with the application program;determine, based on the collected read/write information, whether the application program is read-intensive or write-intensive;set a first threshold as a criterion threshold if the application program is read-intensive and set a second threshold as the criterion threshold if the application program is write-intensive, the second threshold being greater than the first threshold; andreassign the application program from the first semiconductor storage device to a second semiconductor storage device of the plurality of semiconductor storage devices if the life-expectancy index value of the first semiconductor storage device is less than the criterion threshold.