发明名称 Semiconductor device and method for detecting damaging of a semiconductor device
摘要 A micro-electro-mechanical device includes a movable structure. The movable structure includes a test structure changing an electrical characteristic, if the movable structure is damaged. Further, a method for detecting damaging of a micro-electro-mechanical device includes detecting a change of an electrical characteristic of the electrical test structure of the movable structure. Further, the method includes indicating a deviation of the electrical characteristic from a predefined tolerable range.
申请公布号 US9618561(B2) 申请公布日期 2017.04.11
申请号 US201414197564 申请日期 2014.03.05
申请人 Infineon Technologies AG 发明人 Meinhold Dirk
分类号 G01R31/26;B81B7/02;B81C99/00;H01L21/66;G01L27/00 主分类号 G01R31/26
代理机构 Schiff Hardin LLP 代理人 Schiff Hardin LLP
主权项 1. A micro-electro-mechanical device comprising: a movable structure, wherein the movable structure comprises a test structure changing an electrical characteristic, if the movable structure is damaged, and wherein the movable structure comprises a pn-junction between a first lateral doping region of the movable structure and a second lateral doping region of the movable structure.
地址 Neubiberg DE