发明名称 |
Semiconductor device and method for detecting damaging of a semiconductor device |
摘要 |
A micro-electro-mechanical device includes a movable structure. The movable structure includes a test structure changing an electrical characteristic, if the movable structure is damaged. Further, a method for detecting damaging of a micro-electro-mechanical device includes detecting a change of an electrical characteristic of the electrical test structure of the movable structure. Further, the method includes indicating a deviation of the electrical characteristic from a predefined tolerable range. |
申请公布号 |
US9618561(B2) |
申请公布日期 |
2017.04.11 |
申请号 |
US201414197564 |
申请日期 |
2014.03.05 |
申请人 |
Infineon Technologies AG |
发明人 |
Meinhold Dirk |
分类号 |
G01R31/26;B81B7/02;B81C99/00;H01L21/66;G01L27/00 |
主分类号 |
G01R31/26 |
代理机构 |
Schiff Hardin LLP |
代理人 |
Schiff Hardin LLP |
主权项 |
1. A micro-electro-mechanical device comprising:
a movable structure, wherein the movable structure comprises a test structure changing an electrical characteristic, if the movable structure is damaged, and wherein the movable structure comprises a pn-junction between a first lateral doping region of the movable structure and a second lateral doping region of the movable structure. |
地址 |
Neubiberg DE |