发明名称 Semiconductor package with multi-section conductive carrier
摘要 In one implementation, a power semiconductor package includes a non-contiguous, multi-section conductive carrier. A control transistor with a control transistor terminal is coupled to a first section of the multi-section conductive carrier, while a sync transistor with a sync transistor terminal is coupled to a second section of the multi-section conductive carrier. The first and second sections of the multi-section conductive carrier sink heat generated by the control and sync transistors. The first and second sections of the multi-section conductive carrier are electrically connected only through a mounting surface attached to the power semiconductor package. Another implementation of the power semiconductor package includes a driver IC coupled to a third section of the multi-section conductive carrier. A method for fabricating the power semiconductor package is also disclosed. The power semiconductor package according to the present disclosure results in effective thermal protection, current carrying capability, and a relatively small size.
申请公布号 US9620441(B2) 申请公布日期 2017.04.11
申请号 US201615137160 申请日期 2016.04.25
申请人 Infineon Technologies Americas Corp. 发明人 Cho Eung San
分类号 H01L23/495;H01L25/07;H01L23/00;H01L23/31;H01L23/12;H01L21/48;H01L21/56;H01L25/11;H01L25/16;H01L23/492;H01L23/04;H02M3/158 主分类号 H01L23/495
代理机构 Shumaker & Sieffert, P.A. 代理人 Shumaker & Sieffert, P.A.
主权项 1. A power semiconductor package comprising: a multi-section conductive carrier; a first power transistor coupled to said multi-section conductive carrier; a second power transistor coupled to said multi-section conductive carrier; said multi-section conductive carrier sinking heat generated from at least one of said first and second power transistors; said first and second power transistors of said multi-section conductive carrier being electrically connected through a mounting surface attached to said power semiconductor package.
地址 El Segundo CA US