| 发明名称 | Semiconductor device with driver for switching element | ||
| 摘要 | According to one embodiment, a semiconductor device includes: a first switching element comprising a heterojunction comprising a first compound semiconductor layer and a second compound semiconductor layer; and a driver which applies a voltage to a gate of the first switching element to control turn-on and turn-off of the first switching element. The driver temporarily increases a gate voltage of the first switching element at a timing when the first switching element is turned on, during a period while the first switching element is on. | ||
| 申请公布号 | US9621150(B2) | 申请公布日期 | 2017.04.11 |
| 申请号 | US201514839216 | 申请日期 | 2015.08.28 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Naka Toshiyuki |
| 分类号 | H03K17/06;H02M3/155;H01L29/20;H01L29/778;H03K17/687 | 主分类号 | H03K17/06 |
| 代理机构 | White & Case LLP | 代理人 | White & Case LLP |
| 主权项 | 1. A semiconductor device comprising: a first switching element comprising a heterojunction comprising a first compound semiconductor layer and a second compound semiconductor layer; and a driver which applies a voltage to a gate of the first switching element to control turn-on and turn-off of the first switching element; and a differentiator which differentiates a signal for controlling turn-on and turn-off of the first switching element, wherein the driver temporarily increases a gate voltage of the first switching element at a timing when the first switching element is turned on, during a period while the first switching element is on, and the driver uses an output result from the differentiator to generate the gate voltage. | ||
| 地址 | Tokyo JP | ||