发明名称 |
Reducing switching losses associated with a synchronous rectification MOSFET |
摘要 |
A synchronous rectifier is described that includes a transistor device that has a gate terminal, a source terminal, a drain terminal, and a field-plate electrode. The field-plate electrode of the transistor device includes an integrated diode. The integrated diode is configured to discharge a parasitic capacitance of the transistor device during each switching operation of the synchronous rectifier. In some examples, the integrated diode is also configured to charge the parasitic capacitance of the transistor device during each switching operation of the synchronous rectifier. |
申请公布号 |
US9621058(B2) |
申请公布日期 |
2017.04.11 |
申请号 |
US201514600708 |
申请日期 |
2015.01.20 |
申请人 |
Infineon Technologies Austria AG |
发明人 |
Braz Cesar Augusto;Laforet David |
分类号 |
H02M3/335;H01L29/78;H01L25/03;H01L29/66;H01L29/40;H01L27/02;H01L29/739;H03K17/14;H02M1/00;H02M1/34 |
主分类号 |
H02M3/335 |
代理机构 |
Shumaker & Sieffert, P.A. |
代理人 |
Shumaker & Sieffert, P.A. |
主权项 |
1. A transistor device configured as a synchronous rectifier, the transistor device comprising:
a gate terminal; a source terminal; a drain terminal; and a field-plate electrode including an integrated diode, wherein the integrated diode is configured to discharge a parasitic capacitance of the transistor device during each switching operation of the synchronous rectifier. |
地址 |
Villach AT |