| 发明名称 | Functional data reading in a non-volatile memory | ||
| 摘要 | Methods for reading data that was functionally stored include reading a pattern of threshold voltages from a particular group of memory cells, determining which pattern, of a plurality of patterns, matches the read pattern, and determining a group of decoded data associated with the pattern determined to match the read pattern. | ||
| 申请公布号 | US9620234(B2) | 申请公布日期 | 2017.04.11 |
| 申请号 | US201615233097 | 申请日期 | 2016.08.10 |
| 申请人 | Micron Technology, Inc. | 发明人 | Ghodsi Ramin |
| 分类号 | G11C11/34;G11C16/26;G11C16/10 | 主分类号 | G11C11/34 |
| 代理机构 | Dicke, Billig & Czaja, PLLC | 代理人 | Dicke, Billig & Czaja, PLLC |
| 主权项 | 1. A method for reading data that was functionally stored, the method comprising: reading a pattern of threshold voltages from a particular group of memory cells; determining which pattern, of a plurality of patterns, matches the read pattern; and determining a group of decoded data associated with the pattern of the plurality of patterns determined to match the read pattern. | ||
| 地址 | Boise ID US | ||