发明名称 |
Memory device that performs an advance reading operation |
摘要 |
A memory device includes a semiconductor memory unit, and a controller configured to communicate with a host through a serial interface and access the memory semiconductor unit in response to commands received through the serial interface. The controller, in response to a first read command received through the serial interface to read data in a first page of the semiconductor memory unit, issues a first command to the semiconductor memory unit to read data in the first page and, in addition, a second command to read data in a second page that is consecutive to the first page and not specified in the first read command. |
申请公布号 |
US9620230(B2) |
申请公布日期 |
2017.04.11 |
申请号 |
US201615062021 |
申请日期 |
2016.03.04 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Takeda Shinya;Kitazume Toshihiko;Kada Kenichirou;Tsuji Nobuhiro;Kodera Shunsuke;Iwata Tetsuya;Furuyama Yoshio;Narai Hirosuke |
分类号 |
G11C16/26;G11C16/08 |
主分类号 |
G11C16/26 |
代理机构 |
Patterson & Sheridan, LLP |
代理人 |
Patterson & Sheridan, LLP |
主权项 |
1. A memory device, comprising:
a semiconductor memory unit; and a controller configured to communicate with a host through a serial interface and access the semiconductor memory unit in response to commands received through the serial interface, wherein the controller, in response to a first read command received through the serial interface to read data in a first page of the semiconductor memory unit, issues a first command to the semiconductor memory unit to read data in the first page and, in addition, a second command to read data in a second page that is consecutive to the first page and not specified in the first read command. |
地址 |
Tokyo JP |