发明名称 |
Pulse mechanism for memory circuit interruption |
摘要 |
In a memory system where multiple memory chips communicate their ready/busy status on a shared bus line, a pulse mechanism is used for the individual memory chips to indicate their ready/busy status to the controller. In one example, the controller assigns pulse durations of differing lengths to the memory dies to allow the controller to distinguish between them. Techniques for dealing with bus collisions between the pulses of different chips are also described. |
申请公布号 |
US9620182(B2) |
申请公布日期 |
2017.04.11 |
申请号 |
US201314145116 |
申请日期 |
2013.12.31 |
申请人 |
SANDISK TECHNOLOGIES LLC |
发明人 |
Tuers Daniel;Manohar Abhijeet;Weinberg Yoav;Barrocas Milton Lourenco |
分类号 |
G06F13/372;G11C7/22;G11C16/32;G06F13/362;G06F13/38;G06F13/16 |
主分类号 |
G06F13/372 |
代理机构 |
Foley & Lardner LLP |
代理人 |
Foley & Lardner LLP |
主权项 |
1. A non-volatile memory system comprising:
a plurality of memory circuits, each including one or more arrays of non-volatile memory cells; a controller circuit to control the transfer of data between the memory circuits and a host connected to the memory system and to manage the storage of data on the memory circuits; and a bus structure connecting the controller circuit with the memory circuits, the bus structure including a common first bus line whereby the memory circuits indicate to the controller circuit the ready/busy status of the memory circuits, wherein each of the memory circuits indicates the ready/busy status thereof by application of a pulse to the first bus line, the duration of which is distinct for each of the memory circuits. |
地址 |
Plano TX US |