Reflective mask blank for EUV lithography, substrate with funtion film for the mask blank, and methods for their production

摘要

A substrate with a conductive film to be used for producing a reflective mask blank for EUV lithography, comprising a substrate and a conductive film formed on the substrate, wherein the conductive film has at least two layers of a lower layer formed on the substrate side and an upper layer formed on the lower layer; the lower layer is a CrN type film which contains Cr and N; the upper layer is a CrON type film which contains Cr, N and O; in the CrN type film, the total content of Cr and N is at least 85 at %, and the compositional atomic ratio of Cr to N is Cr:N=9.5:0.5 to 3:7; in the CrON type film, the total content of Cr, N and O is at least 85 at %, and the compositional atomic ratio of Cr to (N+O) is Cr:(N+O)=9.5:0.5 to 3:7; and the film thickness of the CrON type film is from 0.5 to 3 nm, and the standard deviation of the film thickness distribution of the CrON type film is at most 0.18 nm.

主权项

1. A substrate with a conductive film to be used for producing a reflective mask blank for EUV lithography, comprising a substrate and a conductive film formed on the substrate;
wherein the conductive film has at least two layers of a layer (lower layer) formed over the substrate side and a layer (upper layer) formed on the lower layer; the lower layer of the conductive film is a CrN type film which contains chromium (Cr) and nitrogen (N); the upper layer of the conductive film is a CrON type film which contains Cr, N and oxygen (O); in the CrN type film, the total content of Cr and N is at least 85 at %, and the compositional ratio (atomic ratio) of Cr to N is Cr:N=9.5:0.5 to 3:7; in the CrON type film, the total content of Cr, N and O is at least 85 at %, and the compositional ratio (atomic ratio) of Cr to (N+O) is Cr:(N+O)=9.5:0.5 to 3:7; and the film thickness of the CrON type film is from 0.5 to 3 nm, and the standard deviation of the film thickness distribution of the CrON type film is at most 0.18 nm.