| 发明名称 | GaN-based semiconductor transistor | ||
| 摘要 | A semiconductor device according an embodiment includes a GaN layer, a GaN-based semiconductor layer provided on the GaN layer and having a wider band gap than the GaN layer, a source electrode electrically connected to the GaN-based semiconductor layer, a drain electrode electrically connected to the GaN-based semiconductor layer, a gate electrode provided in the GaN-based semiconductor layer between the source electrode and the drain electrode, and a gate insulating film provided at least between the GaN layer and the gate electrode, the gate insulating film including a first insulating film and a second insulating film, the first insulating film provided on the GaN layer, the first insulating film having a thickness equal to or greater than 0.2 nm and less than 2 nm, the first insulating film including nitrogen, the second insulating film provided between the first insulating film and the gate electrode, the second insulating film including oxygen. | ||
| 申请公布号 | US9620599(B2) | 申请公布日期 | 2017.04.11 |
| 申请号 | US201514971118 | 申请日期 | 2015.12.16 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Saito Hisashi;Yumoto Miki |
| 分类号 | H01L29/00;H01L29/20;H01L21/02;H01L29/778;H01L29/78;H01L29/205;H01L29/51;H01L29/66;H01L29/49;H01L29/423 | 主分类号 | H01L29/00 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A semiconductor device comprising: a GaN layer; a GaN-based semiconductor layer provided on the GaN layer and having a wider band gap than the GaN layer; a source electrode electrically connected to the GaN-based semiconductor layer; a drain electrode electrically connected to the GaN-based semiconductor layer; a gate electrode provided in the GaN-based semiconductor layer between the source electrode and the drain electrode; and a gate insulating film provided at least between the GaN layer and the gate electrode, and between the GaN-based semiconductor layer and the gate electrode, the gate insulating film including a first insulating film and a second insulating film, the first insulating film provided between the GaN layer and the gate electrode, and between the GaN-based semiconductor layer and the gate electrode, the first insulating film having a thickness equal to or greater than 0.2 nm and less than 2 nm, the first insulating film including nitrogen, the second insulating film provided between the first insulating film and the gate electrode, the second insulating film including oxygen. | ||
| 地址 | Minato-ku JP | ||