Image sensors including non-aligned grid patterns

摘要

An image sensor includes a substrate including a first surface and a second surface, a first device isolation layer disposed in the substrate and defining a plurality of pixels in the substrate, and having a lower surface adjacent the first surface of the substrate and an upper surface adjacent the second surface of the substrate. Each of the pixels includes a photoelectric conversion element, a floating diffusion region adjacent the first surface of the substrate, and a grid pattern on the second surface of the substrate. At least one of the grid patterns is not vertically aligned with the first device isolation layer.

主权项

1. An image sensor comprising:
a first pixel comprising:
a first photodiode in a substrate;a first device isolation layer in the substrate and on a side of the first photodiode;a first grid pattern on the substrate and adjacent the side of the first photodiode, a central vertical axis of the first grid pattern being offset in a first horizontal direction from a central vertical axis of the first device isolation layer by a first distance and the first grid pattern being configured to reflect incident light into the first photodiode; anda first color filter on the photodiode, first color filter comprising a sidewall that is adjacent the side of the first photodiode, and the sidewall of the first color filter being offset in the first horizontal direction from the central vertical axis of the first device isolation layer; and a second pixel comprising:
a second photodiode in the substrate;a second device isolation layer in the substrate and on a side of the second photodiode;a second grid pattern on the substrate and adjacent the side of the second photodiode, a central vertical axis of the second grid pattern being offset in the first horizontal direction from a central vertical axis of the second device isolation layer by a second distance that is less than the first distance; anda second color filter on the second photodiode, the second color filter comprising sidewall that is adjacent the side of the second photodiode, and the sidewall of the second color filter being offset in the first horizontal direction from the central vertical axis of the second device isolation layer, wherein a center of the image sensor is closer to the second pixel than the first pixel.