Vertical semiconductor device

摘要

A vertical semiconductor device includes a channel structure extending from a substrate in a first direction perpendicular to an upper surface of the substrate, and a ground selection line, word lines, and a string selection line sequentially formed on a side surface of the channel structure in the first direction to be separated from one another. The channel structure includes a protruding region formed in a side wall portion of the channel structure between the ground selection line and the upper surface of the substrate, the protruding region protruding in a horizontal direction perpendicular to the first direction.

主权项

1. A vertical semiconductor device comprising:
a first etch stop layer formed on a substrate; a ground selection line, word lines, and a string selection line sequentially formed on the first etch stop layer to be separated from one another in a first direction perpendicular to an upper surface of the substrate; and a channel structure contacting the upper surface of the substrate by penetrating the first etch stop layer, the ground selection line, the word lines, and the string selection line, wherein a portion of the channel structure penetrating the first etch stop layer protrudes in a horizontal direction, wherein the first etch stop layer includes a metal, and wherein a first width of the channel structure in the protruding region in the horizontal direction is larger than a second width of the channel structure in the horizontal direction located on a same level as the ground selection line.