Stacked protection devices with overshoot protection and related fabrication methods

摘要

Protection circuits, device structures and related fabrication methods are provided. An exemplary protection circuit includes a first protection arrangement and a second protection arrangement. The first protection arrangement includes a first transistor having a first collector, a first emitter, and a first base coupled to the first emitter at a first node, and a second transistor having a second collector, a second emitter, and a second base coupled to the second emitter at a second node, the second collector being coupled to the first collector at a third node. The second protection arrangement is coupled electrically in series between the second node and a fourth node. The protection circuit further includes a first diode coupled between the third node and the fourth node.

主权项

1. A protection circuit comprising:
a first protection arrangement comprising:
a first transistor having a first collector, a first emitter, and a first base coupled to the first emitter at a first node; anda second transistor having a second collector, a second emitter, and a second base coupled to the second emitter at a second node, the second collector being coupled to the first collector at a third node; a second protection arrangement coupled electrically in series between the second node and a fourth node; and a first diode coupled between the third node and the fourth node, wherein a breakdown voltage of the first diode is less than a sum of a first transient breakdown voltage of the second transistor and a second transient breakdown voltage of the second protection arrangement.