| 发明名称 | Semiconductor physical quantity sensor | ||
| 摘要 | A semiconductor physical quantity sensor includes: a first base material; an electrode formed on the first base material; a diaphragm which bends in accordance with a physical quantity applied from the outside; a second base material fixed to the first base material and supporting the diaphragm such that the diaphragm is opposed to the electrode with a space (S) in between; and an insulator formed on a surface on the first base material side of the diaphragm. Moreover, a wall portion to define the space (S) is formed between the insulator and the electrode. | ||
| 申请公布号 | US9618412(B2) | 申请公布日期 | 2017.04.11 |
| 申请号 | US201414913158 | 申请日期 | 2014.08.08 |
| 申请人 | Panasonic Intellectual Property Management Co., Ltd. | 发明人 | Kataoka Kazushi;Ogihara Jun;Ushiyama Naoki;Shiroishi Hisanori |
| 分类号 | G01L9/00;B81B7/00;B81B3/00 | 主分类号 | G01L9/00 |
| 代理机构 | McDermott Will & Emery LLP | 代理人 | McDermott Will & Emery LLP |
| 主权项 | 1. A semiconductor physical quantity sensor comprising: a first base material; an electrode formed on the first base material; a diaphragm configured to bend in accordance with a physical quantity applied from the outside; a second base material fixed to the first base material and supporting the diaphragm such that the diaphragm is opposed to the electrode with a space in between; an insulator formed on a surface of the diaphragm, the surface being on the first base material side; a through-hole penetrating the second base material to detect a capacitance between the diaphragm and the electrode, and a wall portion to surround at least part of the through-hole and define the space and the through-hole, wherein the wall portion is formed in a gap between the insulator and the electrode facing each other in a thickness direction of the diaphragm. | ||
| 地址 | Osaka JP | ||