发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
A method of manufacturing a semiconductor device includes providing a semiconductor substrate including a conductive pad disposed thereon; disposing a polymeric material over the semiconductor substrate and the conductive pad; patterning the polymeric material to form an opening exposing at least a portion of the conductive pad; disposing a conductive layer over the polymeric material and the portion of the conductive pad; and forming a conductor over the portion of the conductive pad and within the opening. |
申请公布号 |
US2017098588(A1) |
申请公布日期 |
2017.04.06 |
申请号 |
US201615380499 |
申请日期 |
2016.12.15 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
YANG TIEN-CHUNG;HUANG LIN-CHIH;CHEN HSIEN-WEI;SU AN-JHIH;HUANG LI-HSIEN |
分类号 |
H01L23/31;H01L21/56;H01L23/00;H01L23/482;H01L23/485 |
主分类号 |
H01L23/31 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method of manufacturing a semiconductor device, comprising:
providing a semiconductor substrate including a conductive pad disposed thereon; disposing a polymeric material over the semiconductor substrate and the conductive pad; patterning the polymeric material o form an opening exposing at least a portion of the conductive pad; disposing a conductive layer over the polymeric material and the portion of the conductive pad; and forming a conductor over the portion of the conductive pad and within the opening. |
地址 |
HSINCHU TW |