METHODS FOR ATOMIC LEVEL RESOLUTION AND PLASMA PROCESSING CONTROL

摘要

Methods and apparatus for processing substrates are provided. In some embodiments, methods of processing substrates includes: (a) providing a process gas comprising a polymer-forming gas and an etching gas between a first electrode and a second electrode within the processing volume, wherein the first electrode is opposite the second electrode; (b) applying a first voltage waveform from a first RF power source to the second electrode to form a plasma from the process gas, wherein the plasma has a first ion energy to deposit a polymer layer directly atop a dielectric layer of the substrate; and (c) adjusting the first voltage waveform to a second voltage waveform to increase an ion energy of the plasma from the first ion energy to a second ion energy, wherein the plasma at the second ion energy ceases to deposit the polymer layer and proceeds to etch the polymer layer and the dielectric layer.

主权项

1. A method of processing a substrate within a processing volume of a substrate processing chamber, comprising:
(a) providing a process gas comprising a polymer-forming gas and an etching gas between a first electrode and a second electrode within the processing volume, wherein the first electrode is opposite the second electrode; (b) applying a first voltage waveform from a first RF power source to the second electrode to form a plasma from the process gas, wherein the plasma has a first ion energy to deposit a polymer layer directly atop a dielectric layer of the substrate; and (c) adjusting the first voltage waveform to a second voltage waveform to increase an ion energy of the plasma from the first ion energy to a second ion energy, wherein the plasma at the second ion energy ceases to deposit the polymer layer and proceeds to etch the polymer layer and the dielectric layer.