| 摘要 |
[Problem to be Solved] The present invention provides a Cu—Co—Ni—Si alloy for an electronic component having improved reliability in which in addition to high strength and high electrical conduction, bendability generally difficult to achieve with strength is also provided to a Corson copper alloy.;[Solution] The present invention is a Cu—Co—Ni—Si alloy for an electronic component comprising 0.5 to 3.0% by mass of Co and 0.1 to 1.0% by mass of Ni, a concentration (% by mass) ratio of Ni to Co (Ni/Co) being adjusted in the range of 0.1 to 1.0, the alloy comprising Si so that a (Co+Ni)/Si mass ratio is in the range of 3 to 5, and comprising a balance comprising Cu and unavoidable impurities, wherein a coefficient of variation of concentration ratios of Co to Ni (Co/Ni) measured for at least 100 second-phase particles is 20% or less. |
| 主权项 |
1. A Cu—Co—Ni—Si alloy for an electronic component comprising:
0.5 to 3.0% by mass of Co and 0.1 to 1.0% by mass of Ni, wherein the ratio of the concentration (% by mass) of Ni to Co (Ni/Co) is in the range of 0.1 to 1.0, Si so that the (Co+Ni)/Si mass ratio of the alloy is in the range of 3 to 5, the balance of the alloy comprising Cu and unavoidable impurities, and optionally up to 1.0% by mass, in total, of at least one selected from the group consisting of Fe, Mg, Sn, Zn, B, P, Cr, Zr, Ti, Al, and Mn, wherein a coefficient of variation of concentration ratios of Co to Ni (Co/Ni) measured for at least 100 second-phase particles is 20% or less. |
