| 发明名称 |
AMOPHIZATION INDUCED METAL-SILICON CONTACT FORMATION |
| 摘要 |
A method of forming a metal-silicon contact is provided. Embodiments include forming a metal layer over a substrate; forming an amorphous silicon (a-Si) capping layer over the metal layer; implanting ions to induce an athermal migration of the a-Si capping layer into the metal layer; and annealing the metal layer and the a-Si capping layer to form a metal silicide layer over the substrate. |
| 申请公布号 |
US2017098544(A1) |
申请公布日期 |
2017.04.06 |
| 申请号 |
US201514874623 |
申请日期 |
2015.10.05 |
| 申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
PAWLAK Bartlomiej Jan |
| 分类号 |
H01L21/225;H01L21/02;H01L21/324 |
主分类号 |
H01L21/225 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
forming a metal layer over a substrate; forming an amorphous silicon (a-Si) capping layer over the metal layer; implanting ions to induce an athermal migration of the a-Si capping layer into the metal layer; and annealing the metal layer and the a-Si capping layer to form a metal silicide layer over the substrate. |
| 地址 |
Grand Cayman KY |
