METHOD OF MODIFYING EPITAXIAL GROWTH SHAPE ON SOURCE DRAIN AREA OF TRANSISTOR

摘要

Methods for forming semiconductor devices, such as FinFETs, are provided. An epitaxial film is formed over a semiconductor fin, and the epitaxial film includes a top surface having two facets. A cap layer is deposited on the top surface, and portions of the epitaxial film in a lateral direction are removed. Having a smaller lateral dimension prevents the epitaxial film from merging with an adjacent epitaxial film and creates a gap between the epitaxial film and the adjacent epitaxial film.

主权项

1. A method for forming a semiconductor device, comprising:
forming an epitaxial film over a semiconductor fin, wherein the epitaxial film includes a top surface, a first corner, and a second corner opposite the first corner; depositing a cap layer non-conformally on the top surface; and removing the first and second corners of the epitaxial film.