| 发明名称 |
INTEGRATED CIRCUITS (ICS) ON A GLASS SUBSTRATE |
| 摘要 |
An integrated circuit (IC) includes a glass substrate and a buried oxide layer. The IC additionally includes a first semiconductor device coupled to the glass substrate. The first semiconductor device includes a first gate and a first portion of a semiconductive layer coupled to the buried oxide layer. The first gate is located between the glass substrate and the first portion of the semiconductive layer and between the glass substrate and the buried oxide layer. The IC additionally includes a second semiconductor device coupled to the glass substrate. The second semiconductor device includes a second gate and a second portion of the semiconductive layer. The second gate is located between the glass substrate and the second portion of the semiconductive layer. The first portion is discontinuous from the second portion. |
| 申请公布号 |
US2017098663(A1) |
申请公布日期 |
2017.04.06 |
| 申请号 |
US201615380800 |
申请日期 |
2016.12.15 |
| 申请人 |
QUALCOMM Incorporated |
发明人 |
Gu Shiqun;Kim Daeik Daniel;Nowak Matthew Michael;Kim Jonghae;Yun Changhan Hobie;Lan Je-Hsiung Jeffrey;Berdy David Francis |
| 分类号 |
H01L27/12;H01L23/528;H01L21/768;H01L21/84;H01L21/762;H01L29/10;H01L27/092 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit comprising:
a glass substrate; a buried oxide layer; a first semiconductor device coupled to the glass substrate, the first semiconductor device including a first gate and a first portion of a semiconductive layer coupled to the buried oxide layer, wherein the first gate is located between the glass substrate and the first portion of the semiconductive layer and between the glass substrate and the buried oxide layer; and a second semiconductor device coupled to the glass substrate, the second semiconductor device including a second gate and a second portion of the semiconductive layer, wherein the second gate is located between the glass substrate and the second portion of the semiconductive layer, and wherein the first portion of the semiconductive layer is discontinuous from the second portion of the semiconductive layer. |
| 地址 |
San Diego CA US |
