发明名称 THIN FILM TRANSISTOR SUBSTRATE, DISPLAY APPARATUS INCLUDING THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE, AND METHOD OF MANUFACTURING DISPLAY APPARATUS
摘要 A thin film transistor (TFT) substrate in which properties of a TFT may be modified according to a function of the TFT, a display apparatus including the TFT substrate, a method of manufacturing the TFT substrate, and a method of manufacturing the display apparatus. The thin film transistor (TFT) substrate includes a substrate; a first TFT disposed on the substrate and comprising a first active pattern and a first gate electrode at least partially overlapping with the first active pattern and disposed between the substrate and the first active pattern; and a second TFT disposed on the substrate and comprising a second active pattern and a second gate electrode at least partially overlapping with the second active pattern.
申请公布号 US2017098666(A1) 申请公布日期 2017.04.06
申请号 US201615176510 申请日期 2016.06.08
申请人 Samsung Display Co., Ltd. 发明人 Kim Junghyun
分类号 H01L27/12;H01L29/66;H01L51/05;H01L27/28;H01L29/786 主分类号 H01L27/12
代理机构 代理人
主权项 1. A thin film transistor (TFT) substrate comprising: a substrate; a first TFT disposed on the substrate and comprising a first active pattern and a first gate electrode at least partially overlapping with the first active pattern and disposed between the substrate and the first active pattern; and a second TFT disposed on the substrate and comprising a second active pattern and a second gate electrode at least partially overlapping with the second active pattern.
地址 Yongin-City KR