发明名称 |
THIN FILM TRANSISTOR SUBSTRATE, DISPLAY APPARATUS INCLUDING THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE, AND METHOD OF MANUFACTURING DISPLAY APPARATUS |
摘要 |
A thin film transistor (TFT) substrate in which properties of a TFT may be modified according to a function of the TFT, a display apparatus including the TFT substrate, a method of manufacturing the TFT substrate, and a method of manufacturing the display apparatus. The thin film transistor (TFT) substrate includes a substrate; a first TFT disposed on the substrate and comprising a first active pattern and a first gate electrode at least partially overlapping with the first active pattern and disposed between the substrate and the first active pattern; and a second TFT disposed on the substrate and comprising a second active pattern and a second gate electrode at least partially overlapping with the second active pattern. |
申请公布号 |
US2017098666(A1) |
申请公布日期 |
2017.04.06 |
申请号 |
US201615176510 |
申请日期 |
2016.06.08 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
Kim Junghyun |
分类号 |
H01L27/12;H01L29/66;H01L51/05;H01L27/28;H01L29/786 |
主分类号 |
H01L27/12 |
代理机构 |
|
代理人 |
|
主权项 |
1. A thin film transistor (TFT) substrate comprising:
a substrate; a first TFT disposed on the substrate and comprising a first active pattern and a first gate electrode at least partially overlapping with the first active pattern and disposed between the substrate and the first active pattern; and a second TFT disposed on the substrate and comprising a second active pattern and a second gate electrode at least partially overlapping with the second active pattern. |
地址 |
Yongin-City KR |