| 发明名称 |
SEMICONDUCTOR DEVICE HAVING JUMPER PATTERN |
| 摘要 |
According to an exemplary embodiment of the present inventive concept, a semiconductor device is provided as follows. An active region is disposed in one side of a gate line. A non-active region is disposed in the other side of the gate line. A jumper pattern crosses a top portion of the gate line, overlapping the active region and the non-active region. A boundary between the active region and the non-active region is underneath the gate line. |
| 申请公布号 |
US2017098641(A1) |
申请公布日期 |
2017.04.06 |
| 申请号 |
US201514874989 |
申请日期 |
2015.10.05 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Jung Jong-Hoon |
| 分类号 |
H01L27/02;H01L29/06;H01L27/088;H01L23/528;H01L23/522 |
主分类号 |
H01L27/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a gate line; an active region disposed in one side of the gate line; a non-active region disposed in the other side of the gate line; and a jumper pattern crossing a top portion of the gate line and overlapping the active region and the non-active region, wherein a boundary between the active region and the non-active region is underneath the gate line. |
| 地址 |
Suwon-si KR |
