| 发明名称 |
SEMICONDUCTOR DEVICE HAVING A POWER RAIL |
| 摘要 |
A semiconductor device is provided as follows. An active region extends along a first direction. A gate line overlaps the active region and extending along a second direction intersecting the first direction. A power rail has a main pattern extending along the first direction and a sub-pattern branching off from the main pattern to extend along the second direction. A first source/drain contact, electrically connected to the power rail, overlaps the active region and the sub-pattern. |
| 申请公布号 |
US2017098608(A1) |
申请公布日期 |
2017.04.06 |
| 申请号 |
US201514874916 |
申请日期 |
2015.10.05 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUNG JONG-HOON |
| 分类号 |
H01L23/528;H01L27/02;H01L29/417;H01L23/50;H01L23/522 |
主分类号 |
H01L23/528 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
an active region extending along a first direction; a gate line overlapping the active region and extending along a second direction intersecting the first direction; a power rail having a main pattern extending along the first direction and a sub-pattern branching off from the main pattern to extend along the second direction; and a first source/drain contact overlapping the active region, main pattern and the sub-pattern, wherein the first source/drain contact is electrically connected to the power rail. |
| 地址 |
Suwon-si KR |
