发明名称 |
HIGH DYNAMIC RANGE SOLID STATE IMAGE SENSOR AND CAMERA SYSTEM |
摘要 |
A high dynamic range solid state image sensor and camera system are disclosed. In one aspect, the solid state image sensor includes a first wafer including an array of pixels, each of the pixels comprising a photosensor, and a second wafer including an array of readout circuits. Each of the readout circuits is configured to output a readout signal indicative of an amount of light received by a corresponding one of the pixels and each of the readout circuits includes a counter. Each of the counters is configured to increment in response to the corresponding photosensor receiving an amount of light that is greater than a photosensor threshold. Each of the readout circuits is configured to generate the readout signal based on a value stored in the corresponding counter and a remainder stored in the corresponding pixel. |
申请公布号 |
US2017099422(A1) |
申请公布日期 |
2017.04.06 |
申请号 |
US201615141388 |
申请日期 |
2016.04.28 |
申请人 |
QUALCOMM Incorporated |
发明人 |
Goma Sergiu;Hseih Biay-Cheng |
分类号 |
H04N5/235;H04N5/376;H04N5/378 |
主分类号 |
H04N5/235 |
代理机构 |
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代理人 |
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主权项 |
1. A solid state image sensor, comprising:
a first wafer comprising an array of pixels, each of the pixels comprising a photosensor; and a second wafer comprising an array of readout circuits, each of the readout circuits being configured to output a readout signal indicative of an amount of light received by a corresponding one of the pixels, each of the readout circuits comprising a counter, wherein each of the counters is configured to increment in response to the corresponding photosensor receiving an amount of light that is greater than a photosensor threshold, and wherein each of the readout circuits is configured to generate the readout signal based on a value stored in the corresponding counter and a remainder stored in the corresponding pixel. |
地址 |
San Diego CA US |