发明名称 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE
摘要 A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes a processed semiconductor substrate. The processed semiconductor substrate includes active electronic components. The semiconductor structure also includes a dielectric layer that covers, at least partially, the processed semiconductor substrate. An interface layer that is suitable for growing optically active material on the interface layer is bonded to the dielectric layer. An optical gain layer and the processed semiconductor substrate are connected through the dielectric layer by electric and/or optical contacts.
申请公布号 US2017097468(A1) 申请公布日期 2017.04.06
申请号 US201615379523 申请日期 2016.12.15
申请人 International Business Machines Corporation 发明人 Czornomaz Lukas;Fompeyrine Jean;Hofrichter Jens;Offrein Bert Jan;Richter Mirja
分类号 G02B6/13;G02B6/12;H01L23/544 主分类号 G02B6/13
代理机构 代理人
主权项 1. A method for fabricating a semiconductor structure comprising: providing a processed semiconductor substrate that includes active electronic components; depositing a dielectric layer that covers, at least partially, the processed semiconductor substrate; bonding an interface layer to the dielectric layer, wherein the interface layer is suitable for growing optically active material on the interface layer; and connecting the interface layer and the processed semiconductor substrate with each other through the dielectric layer by at least one of electrical and optical contacts.
地址 Armonk NY US