发明名称 TCSAW WITH IMPROVED RELIABILITY
摘要 Embodiments of a Surface Acoustic Wave (SAW) device, or filter, and methods of fabrication thereof are disclosed. In some embodiments, the SAW filter comprises a piezoelectric substrate and an Interdigitated Transducer (IDT) on a surface of the piezoelectric substrate. The IDT includes multiple fingers, each comprising a metal stack. The SAW filter further includes a cap layer on a surface of the IDT opposite the piezoelectric substrate and on areas of the surface of the piezoelectric substrate exposed by the IDT. The cap layer has a thickness in a range of and including 10 to 500 Angstroms and a high electrical resistivity (and thus a low electrical conductivity). For instance, in some embodiments, the electrical resistivity of the cap layer is greater than 10 kilo-ohm meters (KΩ·m). The SAW filter further includes an oxide overcoat layer on a surface of the cap layer opposite the IDT and the piezoelectric substrate.
申请公布号 US2017099042(A1) 申请公布日期 2017.04.06
申请号 US201514954224 申请日期 2015.11.30
申请人 RF Micro Devices, Inc. 发明人 Steiner Kurt G.;Hella Curtiss;Abbott Benjamin P.;Chesire Daniel;Thompson Chad;Chen Alan S.
分类号 H03H9/64 主分类号 H03H9/64
代理机构 代理人
主权项 1. A Surface Acoustic Wave (SAW) filter comprising: a piezoelectric substrate; an Interdigitated Transducer (IDT) on a surface of the piezoelectric substrate, the IDT comprising a plurality of fingers each comprising a metal stack; a cap layer on a surface of the IDT opposite the piezoelectric substrate and on areas of the surface of the piezoelectric substrate exposed by the IDT, the cap layer having a thickness in a range of and including 10 to 500 Angstroms and an electrical resistivity that is greater than 10 kilo-ohmmeters (KΩ·m); and an oxide overcoat layer on a surface of the cap layer opposite the IDT and the piezoelectric substrate.
地址 Greensboro NC US