| 发明名称 |
THIN FILM TRANSISTOR, METHOD OF MANUFACTURING SAME, AND ELECTRONIC DEVICE INCLUDING THIN SAME |
| 摘要 |
A thin film transistor includes a gate electrode, a semiconductor overlapping the gate electrode, a gate insulator between the gate electrode and the semiconductor, and a source electrode and a drain electrode electrically connected to the semiconductor, wherein the gate insulator includes an inorganic insulation layer facing the gate electrode and an organic insulation layer facing the semiconductor. A method of manufacturing the thin film transistor and an electronic device including the thin film transistor are provided. |
| 申请公布号 |
US2017098792(A1) |
申请公布日期 |
2017.04.06 |
| 申请号 |
US201615131165 |
申请日期 |
2016.04.18 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Kim Joo Young;JUNG Jiyoung;PARK Jeong II;YANG Woo Young;YUN Youngjun;LEE Eun Kyung;CHOI Ajeong |
| 分类号 |
H01L51/05;H01L51/00 |
主分类号 |
H01L51/05 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin film transistor comprising:
a gate electrode, a semiconductor overlapping the gate electrode, a gate insulator between the gate electrode and the semiconductor, and at least one of a source electrode or a drain electrode electrically connected to the semiconductor, wherein the gate insulator includes an inorganic insulation layer facing the gate electrode and an organic insulation layer facing the semiconductor. |
| 地址 |
Suwon-si KR |
