| 发明名称 |
AVALANCHE PHOTODIODE FOR DETECTING ULTRAVIOLET RADIATION AND MANUFACTURING METHOD THEREOF |
| 摘要 |
An avalanche photodiode for detecting ultraviolet radiation, including: a silicon carbide body having a first type of conductivity, which is delimited by a front surface and forms a cathode region; an anode region having a second type of conductivity, which extends into the body starting from the front surface and contacts the cathode region; and a guard ring having the second type of conductivity, which extends into the body starting from the front surface and surrounds the anode region. |
| 申请公布号 |
US2017098730(A1) |
申请公布日期 |
2017.04.06 |
| 申请号 |
US201615140880 |
申请日期 |
2016.04.28 |
| 申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
Mazzillo Massimo Cataldo;Sciuto Antonella;Sutera Dario |
| 分类号 |
H01L31/107;H01L31/18;H01L31/0224 |
主分类号 |
H01L31/107 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An avalanche photodiode for detecting ultraviolet radiation, comprising:
a semiconductor body having a first type of conductivity and a front surface and forms a cathode region; an anode region having a second type of conductivity, which extends into said body starting from the front surface and contacts the cathode region; and a guard ring having the second type of conductivity, which extends into said body starting from the front surface and completely laterally surrounds the anode region. |
| 地址 |
Agrate Brianza IT |
