Field Effect Transistors and Methods of Forming Same

摘要

Semiconductor devices and methods of forming the same are provided. A first source/drain layer is formed over a substrate. A channel layer is formed over the first source/drain layer. A second source/drain layer is formed over the channel layer. The first source/drain layer, the channel layer, and the second source/drain layer are patterned to form a fin-shaped structure. A gate stack is formed on a sidewall of the fin-shaped structure. The fin-shaped structure is patterned to expose a top surface of the first source/drain layer.

主权项

1. A semiconductor device comprising:
a fin-shaped structure over a substrate, the fin-shaped structure comprising a first source/drain layer, a channel layer over the first source/drain layer, and a second source/drain layer over the channel layer, a length of the first source/drain layer being greater than a length of the channel layer; and a gate stack on a first sidewall and a top surface of the fin-shaped structure, the fin-shaped structure having a first portion and a second portion, the gate stack covering the first portion of the fin-shaped structure, the first portion of the fin-shaped structure doped with a first dopant type, the second portion of the fin-shaped structure doped with a second dopant type different from the first dopant type.