| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
Provided is a semiconductor device in which electron mobility is improved by applying sufficiently large tensile stress in a predetermined direction without occurrence of cracks in a nitride semiconductor. The semiconductor device includes: substrate (101), electron transit layer (103) that is disposed on substrate (101) and is formed by GaN; and electron supply layer (104) that is disposed on electron transit layer (103) and is formed by AlGaN. A coefficient of thermal expansion of substrate (101) is different between a first direction in a main surface of substrate (101) and a second direction that is perpendicular to the first direction in the main surface, and tensile stress occurs in electron transit layer (103). |
| 申请公布号 |
US2017098703(A1) |
申请公布日期 |
2017.04.06 |
| 申请号 |
US201615381120 |
申请日期 |
2016.12.16 |
| 申请人 |
Panasonic Intellectual Property Management Co., Ltd. |
发明人 |
OGAWA MASAHIRO;ISHIDA MASAHIRO;SHIBATA DAISUKE;KAJITANI RYO |
| 分类号 |
H01L29/778;H01L21/02;H01L29/04;H01L29/20;H01L29/205 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate; an electron transit layer that is disposed on the substrate and is formed by a first nitride semiconductor; and an electron supply layer that is disposed on the electron transit layer and is formed by a second nitride semiconductor, wherein a coefficient of thermal expansion of the substrate is different between a first direction in a main surface of the substrate and a second direction that is perpendicular to the first direction in the main surface, and a first tensile stress occurs in the electron transit layer. |
| 地址 |
Osaka JP |
