| 发明名称 |
IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
Provided is an image sensor having improved characteristics. An image sensor in accordance with an embodiment of the present invention may include first and second photoelectric conversion elements formed in a substrate, wherein the first photoelectric conversion element has a first impurity region; a device isolation trench formed in the substrate and between the first and the second photoelectric conversion elements, wherein a sidewall of the device isolation trench is in contact with the first impurity region; and an epitaxial layer filling the device isolation trench, and having different conductivity from the first impurity region. |
| 申请公布号 |
US2017098681(A1) |
申请公布日期 |
2017.04.06 |
| 申请号 |
US201614992455 |
申请日期 |
2016.01.11 |
| 申请人 |
SK hynix Inc. |
发明人 |
KIM Yeoun-Soo;PARK Chang-Su;LEE Young-Su;KANG Seong-Hun |
| 分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An image sensor comprising:
first and second photoelectric conversion elements formed in a substrate, wherein the first photoelectric conversion element has a first impurity region; a device isolation trench formed in the substrate and between the first and the second photoelectric conversion elements, wherein a sidewall of the device isolation trench is in contact with the first impurity region; and an epitaxial layer filling the device isolation trench, and having different conductivity from the first impurity region. |
| 地址 |
Gyeonggi-do KR |
