发明名称 PLANARIZING PROCESSING METHOD AND PLANARIZING PROCESSING DEVICE
摘要 A planarization processing device for polishing a substrate, such as a semiconductor wafer, includes a drive motor that rotates the substrate about a rotational axis. A support plate holds a pad for polishing the substrate such that the surface of the pad faces the surface of the substrate. The surface of the pad contains a catalyst, e.g., composed of a transition metal compound. A liquid that supports a catalytic reaction for polishing the substrate is supplied between the surfaces of the substrate and the pad. A reciprocating drive device causes the support plate to undergo reciprocating motion in a direction parallel to the surface of the pad by at least an amount that makes possible planarization of the substrate based on the catalytic reaction.
申请公布号 US2017098559(A1) 申请公布日期 2017.04.06
申请号 US201515315864 申请日期 2015.12.28
申请人 TOHO ENGINEERING CO., LTD. ;OSAKA UNIVERSITY 发明人 SUZUKI Eisuke;YAMAUCHI Kazuto;SUZUKI Tatsutoshi;SUZUKI Daisuke
分类号 H01L21/67;B01J35/02;H01L21/02;B01J23/42 主分类号 H01L21/67
代理机构 代理人
主权项 1. A planarization processing method, comprising: bringing a surface of a workpiece and a surface of a pad having a catalyst layer at least on the surface thereof into contact with or proximal to each other; rotating a first one of the workpiece and the pad in a plane of the surface of the first one around a central axis that intersects the surface of the first one while supplying a liquid that supports a catalytic reaction between the surface of the workpiece and the catalyst layer on the surface of the pad; and simultaneously moving a second one of the workpiece and the pad in a direction parallel to the surface of the second one, without rotating around a central axis of the second one, by at least an amount that makes possible planarization of the surface of the workpiece based on the catalytic reaction.
地址 Yokkaichi-shi JP