发明名称 |
PLANARIZING PROCESSING METHOD AND PLANARIZING PROCESSING DEVICE |
摘要 |
A planarization processing device for polishing a substrate, such as a semiconductor wafer, includes a drive motor that rotates the substrate about a rotational axis. A support plate holds a pad for polishing the substrate such that the surface of the pad faces the surface of the substrate. The surface of the pad contains a catalyst, e.g., composed of a transition metal compound. A liquid that supports a catalytic reaction for polishing the substrate is supplied between the surfaces of the substrate and the pad. A reciprocating drive device causes the support plate to undergo reciprocating motion in a direction parallel to the surface of the pad by at least an amount that makes possible planarization of the substrate based on the catalytic reaction. |
申请公布号 |
US2017098559(A1) |
申请公布日期 |
2017.04.06 |
申请号 |
US201515315864 |
申请日期 |
2015.12.28 |
申请人 |
TOHO ENGINEERING CO., LTD. ;OSAKA UNIVERSITY |
发明人 |
SUZUKI Eisuke;YAMAUCHI Kazuto;SUZUKI Tatsutoshi;SUZUKI Daisuke |
分类号 |
H01L21/67;B01J35/02;H01L21/02;B01J23/42 |
主分类号 |
H01L21/67 |
代理机构 |
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代理人 |
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主权项 |
1. A planarization processing method, comprising:
bringing a surface of a workpiece and a surface of a pad having a catalyst layer at least on the surface thereof into contact with or proximal to each other; rotating a first one of the workpiece and the pad in a plane of the surface of the first one around a central axis that intersects the surface of the first one while supplying a liquid that supports a catalytic reaction between the surface of the workpiece and the catalyst layer on the surface of the pad; and simultaneously moving a second one of the workpiece and the pad in a direction parallel to the surface of the second one, without rotating around a central axis of the second one, by at least an amount that makes possible planarization of the surface of the workpiece based on the catalytic reaction. |
地址 |
Yokkaichi-shi JP |