| 发明名称 |
SEMICONDUCTOR DEVICE INCLUDING A REPEATER/BUFFER AT HIGHER METAL ROUTING LAYERS AND METHODS OF MANUFACTURING THE SAME |
| 摘要 |
A semiconductor device includes a series of metal routing layers and a complementary pair of planar field-effect transistors (FETs) on an upper metal routing layer of the metal routing layers. The upper metal routing layer is M3 or higher. Each of the FETs includes a channel region of a crystalline material. The crystalline material may include one or more transition metal dichalcogenide materials such as MoS2, WS2, WSe2, and/or combinations thereof. |
| 申请公布号 |
US2017098661(A1) |
申请公布日期 |
2017.04.06 |
| 申请号 |
US201615210867 |
申请日期 |
2016.07.14 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Rakshit Titash;Obradovic Borna J.;Sengupta Rwik;Wang Wei-E;Hatcher Ryan;Rodder Mark S. |
| 分类号 |
H01L27/12;H01L23/528;H01L29/24;H01L29/10;H01L29/78;H01L29/423;H01L29/66;H01L21/84;H01L23/522;H01L29/45 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a plurality of metal routing layers; and a complementary pair of planar field-effect transistors (FETs) on an upper metal routing layer of the plurality of metal routing layers, the upper metal routing layer being M3 or higher, and wherein each of the FETs comprises a channel region of a crystalline material. |
| 地址 |
Suwon-si JP |
