METHOD OF MANUFACTURING ELEMENT CHIP AND ELEMENT CHIP

摘要

In a plasma processing step in a method of manufacturing an element chip in which a plurality of element chips are manufactured by dividing a substrate, which has a plurality of element regions, the substrate is divided into element chips by exposing the substrate to first plasma. In a protection film forming step of forming a protection film covering a side surface and a second surface by exposing the element chips to second plasma of which raw material gas is mixed gas of carbon fluoride and helium, protection film forming conditions are set such that a thickness of a second protection film of the second surface is greater than a thickness of a first protection film of the side surface.

主权项

1. A method of manufacturing an element chip, in which a plurality of element chips are formed by dividing a substrate, which includes a first surface having a plurality of element regions defined by dividing regions and a second surface on a side opposite to the first surface, using the dividing regions as boundaries, the method comprising:
a preparing step of preparing the substrate in which the first surface side of the substrate is supported on a carrier and on which an etching-resistant layer is formed on the second surface so as to cover regions of the second surface opposite to the element regions and to expose regions of the second surface opposite to the dividing regions; and a plasma processing step of performing plasma processing on the substrate that is supported on the carrier, after the preparing step, wherein the plasma processing step includes a dividing step of dividing the substrate into the element chips by etching regions of the substrate which are not covered by the etching-resistant layer in a depth direction of the substrate up to the first surface by exposing the second surface to first plasma, and causing the element chips each including the first surface, the second surface, and a side surface connecting the first surface and the second surface to be in a state of being held on the carrier with a space between each other, and a protection film forming step of forming a first protection film on the side surface of the element chip and a second protection film on the second surface by exposing the element chips to second plasma in a state where the element chip is held on the carrier with a space between each other after the dividing step, and wherein in the protection film forming step, protection film forming conditions are set such that a thickness of the second protection film is greater than a thickness of the first protection film.