METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a substrate, a semiconductor fin, a gate stack, and an epitaxy structure. The semiconductor fin is disposed in the substrate. A portion of the semiconductor fin is protruded from the substrate. The gate stack is disposed over the portion of the semiconductor fin protruded from the substrate. The epitaxy structure is disposed on the substrate and adjacent to the gate stack. The epitaxy structure has a top surface facing away the substrate, and the top surface has at least one curved portion having a radius of curvature ranging from about 5 nm to about 20 nm.

主权项

1. A method for manufacturing a semiconductor device, comprising:
forming a semiconductor fin in a substrate; forming a gate stack over the semiconductor fin, wherein the gate stack exposes a portion of the semiconductor fin; removing the portion of the semiconductor fin exposed by the gate stack; and forming and shaping an epitaxy structure at the position of the removed semiconductor fin.