Methods for Forming Electrically Precise Capacitors, and Structures Formed Therefrom

摘要

High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition. The method generally comprises the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. Embodiments provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.

主权项

1. A capacitor, comprising:
a. a metal substrate selected from the group consisting of foils and sheets of stainless steel, molybdenum, copper and aluminum, said metal substrate further comprising a barrier layer thereon; b. a first insulating layer on said metal substrate, said first insulating layer having a substantially uniform thickness of from 3 Å to 200 Å and a predetermined breakdown voltage; c. a first capacitor electrode on said first insulating layer, wherein said first capacitor electrode (i) has an uppermost surface that is smooth and/or curved, and (ii) is capacitively coupled to said metal substrate; d. a second insulating layer on said first capacitor electrode and said first insulating layer; and e. an antenna on said second insulating layer, electrically connected to said first capacitor electrode and to said metal substrate.