INTERCONNECTION STRUCTURE, FABRICATING METHOD THEREOF, AND SEMICONDUCTOR DEVICE USING THE SAME

摘要

A semiconductor device includes a semiconductor substrate, an epitaxy structure present in the semiconductor substrate, and a silicide present on a textured surface of the epitaxy structure. A plurality of sputter ions are present between the silicide and the epitaxy structure. Since the surface of the epitaxy structure is textured, the contact area provided by the silicide is increased accordingly, thus the resistance of a interconnection structure in the semiconductor device is reduced.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; an epitaxy structure in the semiconductor substrate and having a textured surface; and a conductor on the textured surface of the epitaxy structure.