| 摘要 |
Provided are a light emitting device, a light emitting device package, and a lighting apparatus. The light emitting device includes: an n-type semiconductor layer (14) including a first area and a second area in a plane; an n-type contact layer (15) disposed on the n-type semiconductor layer (14) and has a first thickness in the first area and a second thickness in the second area; an undoped semiconductor layer (16) disposed on the n-type contact layer (15) having the first thickness in the first area; an active layer disposed (17) on the undoped semiconductor layer (16) in the first area; a p-type semiconductor layer (20) disposed on the active layer in the first area; a first electrode (18) disposed on the n-type contact layer having the second thickness in the second area; and a second electrode (19) disposed on the p-type semiconductor layer. |
