| 摘要 |
The present disclosure provides a resistive random access memory (RRAM), comprising a barrier layer configured to prevent atoms in the top electrode from diffusing into the underlying resistance switching layer, and fabrication methods thereof. Preferably, an amorphous silicon resistance switching layer (320) is treated by a nitrogen plasma before forming a silicon oxide or silicon nitride barrier layer (330) and a top electrode (340) comprising aluminium (341). |
