发明名称 |
OVER-MOLD PACKAGING FOR WIDE BAND-GAP SEMICONDUCTOR DEVICES |
摘要 |
A transistor package includes a lead frame and a gallium nitride (GaN) transistor attached to the lead frame. The lead frame and the GaN transistor are surrounded by an over-mold with a glass transition temperature greater than about 135° C. and a flexural modulus less than about 20 GPa. Using an over-mold with a glass transition temperature greater than about 135° C. and a flexural modulus less than about 20 GPa allows the over-mold to handle the heat produced by the GaN transistor while preventing damage to the GaN transistor due to thermal expansion and/or contraction of the over-mold. |
申请公布号 |
EP3149768(A1) |
申请公布日期 |
2017.04.05 |
申请号 |
EP20150727531 |
申请日期 |
2015.05.26 |
申请人 |
Cree, Inc. |
发明人 |
WOOD, Simon;HERMANSON, Chris |
分类号 |
H01L23/29;H01L23/495 |
主分类号 |
H01L23/29 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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