发明名称 |
CHARGED PARTICLE BEAM DEVICE, THIN FILM FORMING METHOD, DEFECT CORRECTION METHOD AND DEVICE FABRICATION METHOD |
摘要 |
A charged particle beam apparatus is provided that enables faster semiconductor film deposition than the conventional deposition that uses silicon hydrides and halides as source gases. The charged particle beam apparatus includes a charged particle source 1, a condenser lens electrode 2, a blanking electrode 3, a scanning electrode 4, a sample stage 10 on which a sample 9 is mounted, a secondary charged particle detector 8 that detects a secondary charged particle 7 generated from the sample 9 in response to the charged particle beam irradiation, a reservoir 14 that accommodates cyclopentasilane as a source gas, and a gas gun 11 that supplies the source gas to the sample 9. |
申请公布号 |
EP2624279(B1) |
申请公布日期 |
2017.04.05 |
申请号 |
EP20110828920 |
申请日期 |
2011.09.22 |
申请人 |
Hitachi High-Tech Science Corporation;Japan Science and Technology Agency;JSR Corporation |
发明人 |
KOYAMA, Yoshihiro;YASAKA, Anto;SHIMODA, Tatsuya;MATSUKI, Yasuo;KAWAJIRI, Ryo |
分类号 |
H01J37/305;C23C16/04;C23C16/24;C23C16/32;C23C16/40;C23C16/42;C23C16/48;C23C16/56;H01J37/30;H01J37/317;H01L21/02;H01L21/28;H01L21/66;H01L29/66 |
主分类号 |
H01J37/305 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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