发明名称 METHOD OF DESIGNING METROLOGY TARGETS, SUBSTRATES HAVING METROLOGY TARGETS, METHOD OF MEASURING OVERLAY, AND DEVICE MANUFACTURING METHOD
摘要 Metrology targets are formed by a lithographic process, each target comprising a bottom grating and a top grating. Overlay performance of the lithographic process can be measured by illuminating each target with radiation and observing asymmetry in diffracted radiation. Parameters of metrology recipe and target design are selected so as to maximize accuracy of measurement of overlay, rather than reproducibility. The method includes calculating at least one of a relative amplitude and a relative phase between (i) a first radiation component representing radiation diffracted by the top grating and (ii) a second radiation component representing radiation diffracted by the bottom grating after traveling through the top grating and intervening layers. The top grating design may be modified to bring the relative amplitude close to unity. The wavelength of illuminating radiation in the metrology recipe can be adjusted to bring the relative phase close to &pgr;/2 or 3&pgr;/2.
申请公布号 EP3149544(A1) 申请公布日期 2017.04.05
申请号 EP20140748178 申请日期 2014.08.01
申请人 ASML Netherlands B.V. 发明人 DEN BOEF, Arie Jeffrey;BHATTACHARYYA, Kaustuve
分类号 G03F7/20 主分类号 G03F7/20
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