发明名称 CMP COMPOSITIONS SELECTIVE FOR OXIDE OVER POLYSILICON AND NITRIDE WITH HIGH REMOVAL RATE AND LOW DEFECTIVITY
摘要 TThe invention provides a chemical-mechanical polishing composition containing a ceria abrasive and a polymer of formula I: wherein X1 and X2, Y1 and Y2, Z1 and Z2, R1, R2, R3, and R4, and m are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
申请公布号 EP3149101(A1) 申请公布日期 2017.04.05
申请号 EP20150799304 申请日期 2015.05.29
申请人 Cabot Microelectronics Corporation 发明人 LI, Tina;DOCKERY, Kevin;JIA, Renhe;DYSARD, Jeffrey
分类号 C09K3/14 主分类号 C09K3/14
代理机构 代理人
主权项
地址